器件名称: 08051J1R0BBT
功能描述: Gallium Arsenide PHEMT RF Power Field Effect Transistor
文件大小: 132.8KB 共12页
简 介:Freescale Semiconductor Technical Data
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRFG35005MT1 Rev. 3, 1/2006
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% 4.5 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 10.5 0.07 (2) -5 30 - 65 to +150 175 - 20 to +85
(2)
Unit Vdc W W/°C Vdc dBm °C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Class AB Symbol RθJC Val……
