器件名称:
2SA1186
功能描述:
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
文件大小:
23.8KB 共1页
简 介:
LAPT 2SA1186 Application : Audio and General Purpose (Ta=25°C) 2SA1186 –100max –100max –150min 50min –2.0max 60typ 110typ V pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1186 –150 –150 –5 –10 –2 100(Ta=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=1A VCB=–80V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit A A V 19.9±0.3 4.0 a b 3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL () 12 IC (A) –5 VB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (s) 0.25typ tstg (s) 0.8typ tf (s) 0.2typ 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. 00 –4 –2 m 00 m A –16 0mA Collector Current I C (A) –8 0m A –6 –2 Collector Current I C (A) –8 mA –120 A –100m Collector-Emitter Saturation Voltage V CE(s a t) (V ) –10 A –3 –10 –8 –6 –60mA –4 Tem p) Tem (Ca se C 125 25 –5A 0 0 –1 –2 –3 –4 0 0 –0.5 –1.0 –1.5 –2.0 0 0 –30 –1 Base-Emittor Voltage V B E (V) C ( C( –2 –2 Ca I B =–20m A Cas eT se –1 emp –40mA –4 p) I C =–10A ) –2 Collector-Emitter Voltage V C E (V) Base Current I B (A) h……
