器件名称:
2SA1188
功能描述:
Silicon PNP Epitaxial
文件大小:
177.67KB 共7页
简 介:
2SA1188 Silicon PNP Epitaxial REJ03G0639-0300 (Previous ADE-208-1011A) Rev.3.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating –90 –90 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 6 2SA1188 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE(sat) fT Cob Min –90 –90 –5 — — 250 — — — — Typ — — — — — — –0.05 –0.7 130 3.2 Max — — — –0.1 –0.1 800 –0.15 –1.0 — — Unit V V V A A Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, 2 IC = –2 mA* V V MHz pF IC = –10 mA, 2 IB = –1 mA* VCE = –6 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 is grouped by hFE as follows. 2. Pulse test D E 250 to 500 400 to 800 Rev.……
