器件名称:
2SA1193KTZ-E
功能描述:
Silicon PNP Epitaxial, Darlington
文件大小:
161.79KB 共6页
简 介:
2SA1193(K) Silicon PNP Epitaxial, Darlington REJ03G0641-0200 (Previous ADE-208-1013) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1. Emitter 2. Collector 3. Base 3 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.5 –1.0 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SA1193(K) Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test Symbol V(BR)CEO ICBO IEBO hFE VCE(sat) VBE(sat) ton toff Min –60 — — 2000 — — — — Typ — — — — — — 0.3 0.9 Max — –1.0 –1.0 — –1.5 –2.0 — — Unit V A A V V s s Test conditions IC = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 IC = –250 mA, IB = –0.5 mA*1 IC = –250 mA IB1 = –IB2 = –0.5 mA Rev.2.00 Aug 10, 2005 page 2 of 5 2SA1193(K) Main Characteristics Maximum Collector Dissipation Curve Collector power dissipation PC (W) 0.9 –3 Area of Safe Operation PW Collector current IC (A) –1.0 –0.3 –0.1 –0.03 –0.01 iC (peak) IC ma……
