器件名称:
2SC2396
功能描述:
Silicon NPN Epitaxial
文件大小:
24.93KB 共5页
简 介:
2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2396 60 60 5 100 –100 400 150 –55 to +150 2SC2543 90 90 5 100 –100 400 150 –55 to +150 2SC2544 120 120 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SC2396 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO 60 V(BR)CEO 60 V(BR)EBO 5 ICBO IEBO — — 250 — — — — Typ — — — — — — — 0.6 90 3.0 Max — — — 0.1 0.1 2SC2543 Min 90 90 5 — — Typ Max — — — — — — — 0.6 90 3.0 — — — 0.1 0.1 1200 0.2 — — — 2SC2544 Min 120 120 5 — — 250 — — — — Typ Max — — — — — — — 0.6 90 3.0 — — — 0.1 0.1 800 0.2 — — — V V Unit Test conditions V V V A A IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 50 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA DC current transfer ratio hFE*1 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE 1200 250 0.2 — — — — — — — Ga……
