器件名称:
2SC1775AETZ
功能描述:
Silicon NPN Epitaxial
文件大小:
174.42KB 共6页
简 介:
2SC1775A Silicon NPN Epitaxial REJ03G0690-0300 (Previous ADE-208-1056) Rev.3.00 Mar 03, 2006 Application Low frequency low noise amplifier Complementary pair with 2SA872A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 120 120 5 50 300 150 –50 to +150 Unit V V V mA mW °C °C Rev.3.00 Mar 03, 2006 page 1 of 5 2SC1775A Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CEO ICBO hFE1*1 hFE2 VBE VCE(sat) fT Cob NF Min 120 — 400 160 — — Typ — — — — — — Max — 0.5 1200 — 0.75 0.5 — — 5.0 1.5 Unit V A Test conditions IC = 1 mA, RBE = ∞ VCB = 100 V, IE = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 0.1 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 25 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 50 A, f = 10 Hz Rg = 50 k f = 1 kHz V V MHz pF dB dB — 200 — 1.6 — — — — Note: 1. The 2SC1775A is grouped by hFE1 as follows. E F 400 to 800 600 to 1200 Rev.3.00 Mar 03, 2006 page 2 of 5 2SC1775A Main Characteristics Maximum Collector Diss……
