器件名称:
I1LV3216ISD-5SI
功能描述:
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
文件大小:
200.54KB 共18页
简 介:
Preliminary R1LV3216R Series 32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit) REJ03C0367-0001 Preliminary Rev.0.01 2008.03.24 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV3216R Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV3216R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with pin pitch of 0.5mm] and 52-pin micro thin small outline package [TSOP (II): 10.79mm x 10.49mm with pin pitch of 0.4mm]. It gives the best solution for compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.7~3.6V power supply Small stand-by current: 4 A (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1#, CS2, LB# and UB# Common Data I/O Three-state outputs: OR-tie Capability OE# prevents data contention on the I/O bus Ordering Information Type No. R1LV3216RSA-5S% R1LV3216RSA-7S% R1LV3216RSD-5S% R1LV3216RSD-7S% Access time 55 ns*1 70 ns 55 ns*1 70 ns Package 12mm x 20mm 48-pin plastic TSOP (I) (normal-bend type) (48P3R) 350 mil 52-pin plastic μ-TSOP (II) (normal-bend type) (52PTG) Note1. 55ns parts can be supported under the condition of the input timing limitation toward SR……
