器件名称:
IRLB4030PBF
功能描述:
HEXFET Power MOSFET
文件大小:
286.35KB 共8页
简 介:
PD - 97369 IRLB4030PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET Power MOSFET D G S VDSS RDS(on) typ. max. ID 100V 3.4m 4.3m 180A S G D TO-220AB G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Max. 180 130 730 370 2.5 ± 16 21 -55 to + 175 300 10lb in (1.1N m) 305 See Fig. 14, 15, 22a, 22b, Units A W W/°C V V/ns °C c e x x Avalanche Characteristics EAS (Thermally limited) IAR EAR c d f mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j Parameter Typ. ––– 0.50 ––– Max. 0.40 ––– 62 Units……
