器件名称:
IRLB8721PBF
功能描述:
HEXFET Power MOSFET
文件大小:
272.72KB 共9页
简 介:
PD - 97390 IRLB8721PbF Applications l l l HEXFET Power MOSFET Optimized for UPS/Inverter Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use VDSS RDS(on) max Qg (typ.) 30V 8.7m @VGS = 10V 7.6nC : D Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free G D S TO-220AB IRLB8721PbF G D S Gate Drain Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 62 44 250 65 33 0.43 -55 to + 175 300 (1.6mm from case) 10lb in (1.1N m) Units V c A Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g W W/°C Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw °C x x Thermal Resistance RθJC RθCS RθJA Junction-to-Case g f Parameter Typ. ––– 0.5 ––– Max. 2.3 ––– 62 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient Notes through are on page 9 www.irf.com 1 4/22/09 IRLB8721PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss ……
