器件名称: IRLB8743PBF
功能描述: HEXFET Power MOSFET
文件大小: 271.98KB 共9页
简 介:PD - 96232
IRLB8743PbF
Applications
l l l
HEXFET Power MOSFET
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial use
VDSS
30V
RDS(on) max
3.2m
D
Qg
36nC
G
D
S
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
TO-220AB IRLB8743PbF
G Gate
D Drain
S Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
30 ± 20 150 110 78 620 140 68 0.90 -55 to + 175
Units
V
f
A
h Maximum Power Dissipation h
W W/°C °C
Thermal Resistance
RθJC RθCS RθJA Junction-to-Case
i
300 (1.6mm from case) 10lbfxin (1.1N m)
x
h g
Parameter
Typ.
––– 0.5 –––
Max.
1.11 ––– 62
Units
°C/W
Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Notes through are on page 9
www.irf.com
1
04/22/09
IRLB8743PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
B……
