器件名称:
IRLB8748PBF
功能描述:
HEXFET Power MOSFET
文件大小:
270.33KB 共9页
简 介:
PD - 96231 IRLB8748PbF Applications l l l HEXFET Power MOSFET Optimized for UPS/Inverter Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial use VDSS 30V RDS(on) max 4.8m: D Qg 15nC G D S Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free TO-220AB IRLB8748PbF G Gate D Drain S Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 30 ± 20 92 Units V f 65 78 370 75 38 0.5 -55 to + 175 A h Maximum Power Dissipation h Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw c W W/°C °C i 300 (1.6mm from case) 10 lbf in (1.1N m) y y Thermal Resistance RθJC RθCS RθJA Junction-to-Case h Parameter Typ. ––– 0.5 ––– Max. 2.0 ––– 62 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient g Notes through are on page 9 www.irf.com 1 04/22/09 IRLB8748PbF Static @ TJ = 25°C (unless otherwise specified) Paramete……
