器件名称:
2SA1262
功能描述:
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
文件大小:
23.15KB 共1页
简 介:
2SA1262 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1262 –60 –60 –6 –4 –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1262 –100max –100max –60min 40min –0.6max 15typ 90typ V MHz pF 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–60V VEB=–6V IC=–25mA VCE=–4V, IC=–1A IC=–2A, IB=–0.2A VCE=–12V, IE=0.2A VCB=–10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit A A 16.0±0.7 V 8.8±0.2 a b 3.75±0.2 1.35 0.65 +0.2 -0.1 2.5 B C E 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) –20 RL () 10 IC (A) –2 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –200 IB2 (mA) 200 ton (s) 0.25typ tstg (s) 0.75typ tf (s) 0.25typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –4 V CE ( sat ) – I B Characteristics (Typical) –1.5 I C – V BE Temperature Characteristics (Typical) –4 (V C E =–4V) –8 –3 0m A A –60m –50m A Collector Current I C (A) –40m A –30mA Collector Current I C (A) –3 –1.0 emp eT Cas 125 C ( –2 –20mA –2 ) –10mA –1 I C =–3A –2A –1A 0 –0.1 I B =–5mA 0 0 –1 –2 –3 –4 –5 –6 –0.5 –0.1 –0.5 –1 0 0 –0.5 –30C 25C –1 (Cas –0.5 mp) (Cas e Tem p) e Te –1.0 –1.5 Collector-Emitter Voltage V C E (V) Base Cu……
