器件名称:
2N3904N
功能描述:
NPN Silicon Transistor
文件大小:
189.6KB 共3页
简 介:
Semiconductor 2N3904N NPN Silicon Transistor Descriptions General small signal application Switching application Features Low collector saturation voltage : VCE(sat)=0.3V(MAX.) @ IC=50mA, IB=5mA Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz Complementary pair with STA3906A Ordering Information Type NO. 2N3904N Marking 2N3904 Package Code TO-92N Outline Dimensions unit : mm 4.20~4.40 4.20~4.40 2.25 Max. 0.52 Max. 13.50~14.50 0.90 Max. 1.27 Typ. 2.14 Typ. 1 2 3 3.55 Typ 3.09~3.29 0.40 Max. PIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C036-000 1 2N3904N Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range (Ta=25°C) Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 60 40 6 200 400 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn on delay time Rise time Storage time Fall Time (Ta=25°C) Symbol BVCEO ICEX hFE VCE(sat) VBE fT Cob td tr tstg tf Test Condition IC=1mA, IB=0 VCE=30V, VEB=3V VCE=1V, IC=10mA IC=50mA, IB=5mA VCE=1V, IC=10mA VCE=20V, IC=10mA VCB=5V, IE=0, f=1MHz VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=1mA VCC=3V, IC=10mA, IB1=IB2=1mA Min. Typ. Max. 40 100 ……
