器件名称:
2SA1294
功能描述:
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
文件大小:
24.43KB 共1页
简 介:
LAPT 2SA1294 Application : Audio and General Purpose (Ta=25°C) 2SA1294 –100max –100max –230min 50min –2.0max 35typ 500typ V pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1294 –230 –230 –5 –15 –4 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–230V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit A A V 19.9±0.3 4.0 a b 3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 hFE Rank O(50 to 100), Y(70 to 140) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL () 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (s) 0.35typ tstg (s) 1.50typ tf (s) 0.30typ 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) V CE ( sat ) – I B Characteristics (Typical) – 3 I C – V BE Temperature Characteristics (Typical) –15 (V C E =–4V) –3 .0A –2 .0 A –15 – 5 1. A – A 1.0 –5 00 mA Collector Current I C (A) –30 0m A –10 Collector Current I C (A) –2 A 00m –2 –10 mp ) emp ) seT (Ca –30 –1 00 mA eTe C ( 125 I B =–20mA –5A 0 0 0 0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 25C –1 C ( Cas –50……
