器件名称:
2SA1295
功能描述:
Silicon PNP Epitaxial Planar Transistor(Audio and General)
文件大小:
24.36KB 共1页
简 介:
LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1295 –230 –230 –5 –17 –5 200(Tc=25°C) 150 –55 to +150 2SA1295 Application : Audio and General (Ta=25°C) 2SA1295 –100max –100max –230min 50min –2.0max 35typ 500typ V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–230V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit A A V a b hFE Rank O(50 to 100), Y(70 to 140) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL () 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (s) 0.35typ tstg (s) 1.50typ tf (s) 0.30typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) –17 A –3 – 0 2. V CE ( sat ) – I B Characteristics (Typical) – 3 I C – V BE Temperature Characteristics (Typical) (V C E =–4V) –17 –15 Collector Current I C (A) .0 A .5 –1 A –1 .0A mA –15 0 –50 Collector Current I C (A) –30 –10 0mA –2 –200 mA –10 p) eT em –1 00 mA –5 –50mA I B =–20mA 0 –5A 0 0 0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –0.8 –30 C ( Cas I C =–10A –5 125 C ( Cas 25C –1 e Te……
