器件名称:
2SA1309A
功能描述:
Silicon NPN epitaxial planer type(For low-frequency amplification)
文件大小:
36.79KB 共2页
简 介:
Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) 2.0±0.2 Ratings 60 50 7 200 100 300 150 –55 ~ +150 Unit V V V mA mA mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0.7±0.1 marking +0.2 0.45–0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. max 0.1 1 Unit A A V V V 60 50 7 160 0.1 150 3.5 460 0.3 VCE(sat) V MHz pF *h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE Rank 1 Transistor PC — Ta 500 60 Ta=25C 50 2SC3311A IC — VCE 200 VCE=10V IC — VBE Collector pow……
