器件名称: 2SA1323
功能描述: Silicon NPN epitaxial planer type(For high-frequency amplification)
文件大小: 45.67KB 共3页
简 介:Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification Complementary to 2SA1323
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q q
Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT.
marking
+0.2 0.45–0.1
15.6±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
Ratings 30 20 5 30 300 150 –55 ~ +150 Unit V V V mA mW C C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance
(Ta=25C)
Symbol VCBO VCEO VEBO hFE
*
Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 1mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = –1mA, f = 2MHz
min 30 20 5 70
typ
max
2.0±0.2
Unit V V V
220 0.1 0.7 V V MHz 4.0 1.5 50 dB pF
VCE(sat) VBE fT NF Cre Zrb
150
300 2.8
*h
FE
Rank c……
