器件名称: 2SC1980
功能描述: Silicon NPN epitaxial planer type
文件大小: 37.26KB 共2页
简 介:Transistor
2SC1980
Silicon NPN epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SA921
5.0±0.2
Unit: mm
4.0±0.2
q q
High collector to emitter voltage VCEO. Low noise voltage NV.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings 120 120 7 50 20 250 150 –55 ~ +150 Unit V V V
13.5±0.5
5.1±0.2
s Features
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
mA mA mW C C
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV
*
Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 5V, IC = 2mA IC = 20mA, IB = 2mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 40V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT
min
typ
max 0.1 1
Unit A A V V V
120 120 7 180 700 0.6 200 150
VCE(sat)
V MHz mV
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE
Rank
1
Transistor
PC — Ta
500 24 Ta=25C 450 20 IB=50A 45A 40A 16 35A 30A 12 25A 20A ……
