器件名称:
2SC2590
功能描述:
Silicon NPN epitaxial planar type
文件大小:
80.19KB 共3页
简 介:
Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 120 5 0.5 1.0 1.2 150 55 to +150 Unit V V V A A W °C °C 1 2 3 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio *1 Symbol VCEO VEBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = 100 A, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 150 mA VCE = 5 V, IC = 500 mA IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = 50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 11 20 Min 120 5 90 65 100 1.0 1.2 V V MHz pF 220 Typ Max Unit V V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 90 to 155 R 130 to 220 16.0±1.0 Excellent collector current IC characteristics of forward ……
