器件名称:
2SC2631
功能描述:
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
文件大小:
34.48KB 共2页
简 介:
Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 5.1±0.2 Unit: mm 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 150 150 5 100 50 750 150 –55 ~ +150 Unit V V 1 2 3 2.3±0.2 13.5±0.5 Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 V mA mA mW C C 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = 100V, IE = 0 IC = 0.1mA, IB = 0 IE = 10A, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT 150 160 3 300 150 5 130 330 1 V MHz pF mV min typ max 1 Unit A V V *h FE Rank classification R 130 ~ 220 S 185 ~ 330 hFE Rank 1 Transistor PC — Ta 1.0……
