器件名称:
2SC2636
功能描述:
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation)
文件大小:
55.24KB 共3页
简 介:
Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q 1.5 R0.9 R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.0±0.1 R 0. 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 400 150 –55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Power gain Common base reverse transfer capacitance Common emitter reverse transfer capacitance Base time constant (Ta=25C) Symbol VCBO VEBO hFE VBE fT* PG Crb Cre rbb' CC Conditions IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = –2mA VCB = 10V, IE = –2mA VCB = 10V, IE = –15mA, f = 200MHz VCB = 10V, IE = –1mA, f = 100MHz VCB = 6V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = –10mA, f = 31.9MHz 600 min 30 3 25 720 1200 20 0.8 1.5 25 1600 mV MHz dB pF pF ps typ max Unit V V *f T Rank classification Rank fT T 600 ~ 1300 S 900 ~ 1600 1.25±0.05 s Absolute Maximum Ratings (Ta=25C) ……
