器件名称:
MJF18006
功能描述:
Silicon NPN Power Transistors
文件大小:
122.41KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector DESCRIPTION MJF18006 · Fig.1 simplified outline (TO-220F) and symbol Emitter Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg 固电 Collector-base voltage Collector-emitter voltage 体 导 半 PARAMETER Open emitter Open base Emitter-base voltage INC Collector current (DC) Collector current-Peak EM S E G N A H TC=25℃ Open collector C U D N O C I CONDITIONS VALUE 1000 450 9 6 15 4 8 40 150 TOR UNIT V V V A A A A W ℃ ℃ Base current Base current-Peak Total power dissipation Junction temperature Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 3.12 62.5 UNIT ℃/W ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=1.5A ;IB=0.15A TC=125℃ IC=3A ;IB=0.6A TC=125℃ IC=1.5A; IB=0.15A IC=3A; IB=0.6A VCES=RatedVCES;……
