器件名称:
MJH16008
功能描述:
isc Silicon NPN Power Transistor
文件大小:
106.69KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB B MJH16008 PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 850 450 6 8 16 6 12 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Ou……
