器件名称:
MJW16206
功能描述:
Silicon NPN Power Transistors
文件大小:
124.67KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in horizontal deflection circuits for high and every high resolution, monochrome and color CRT monitors PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16206 · Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg 固电 Collector-base voltage 体 导 半 PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current EM S E G N A H Open base Open emitter D N O IC CONDITIONS R O T UC VALUE 1200 500 8 12 15 5.0 10 UNIT V V V A A A A W ℃ ℃ Open collector Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ TC=100℃ 150 39 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 0.67 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICES IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC cu……
