器件名称:
2N6036_09
功能描述:
Complementary power Darlington transistors
文件大小:
366.54KB 共10页
简 介:
2N6036 2N6039 Complementary power Darlington transistors Features ■ ■ ■ . Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 1 Applications 3 2 ■ Linear and switching industrial equipment SOT-32 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Marking 2N6036 2N6039 Polarity NPN PNP Package SOT-32 SOT-32 Packaging Tube Tube Order codes 2N6036 2N6039 May 2009 Doc ID 5064 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 2N6036, 2N6039 1 Absolute maximum ratings Table 2. Symbol VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase = 25°C Storage temperature Max. operating junction temperature 5 4 8 0.1 40 -65 to 150 150 V A A A W °C °C Value 80 Unit V Note: For PNP types voltage and current values are negative. 2/10 Doc ID 5064 Rev 5 2N6036, 2N6039 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 3. Symbol ICEV ICBO ICEO IEBO VCEO(sus)(1) VCE(sat)(1) VBE(sat)(1) VBE(on) hFE(1) Electrical characteristics Parameter Collector cut-off current (VBE = -1.5 V) Co……
