器件名称:
MMBT3904-HF
功能描述:
General Purpose Transistor
文件大小:
186.91KB 共4页
简 介:
General Purpose Transistor SMD Diodes Specialist MMBT3904-HF (NPN) RoHS Device Features -Halogen Free -Epitaxial planar die construction -As complementary type, the PNP transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 Collector 3 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 2 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) 1 Base 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.005(0.20) min 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings(at TA=25 Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Collector dissipation Thermal resistance, junction to ambient Storage temperature and junction temperature O C unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA TSTG, TJ O Min Typ Max 60 40 6 0.2 0.2 625 Unit V V V A W O C/W O -55 +150 C Electrical Characteristics (at TA=25 Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain C unless otherwise noted) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT td tr ts tf 300 35 35 200 50 100 60 0.3 0.95 V V Mhz nS nS nS nS REV:A Conditions IC =100μA , IE=0 IC =1mA , IB=0 IE =100μA , IC=0 VCB=60V , IE=0 VCE=30V , VBE(off)=3V VEB=5V , IC=0 VCE=1V , IC=10mA VCE=1V , IC=50mA Min 60 40 6 Max Unit V V V 0.1 50 0.1 400 ……
