器件名称: MMBT4403-G
功能描述: General Purpose Transistors
文件大小: 60.21KB 共2页
简 介:General Purpose Transistors
COMCHIP
SMD Diodes Specialist
MMBT4403-G (PNP)
RoHS Device
Features
-Switching transistor.
SOT-23
0.119(3.00) 0.110(2.80)
3
0.056(1.40) 0.047(1.20)
Marking: 2T
Collector 3
0.044(1.10) 0.035(0.90)
1
0.083(2.10) 0.066(1.70)
2
0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20)
1 Base
0.020(0.50) 0.013(0.35)
0.006(0.15) max 0.007(0.20) min
2 Emitter
O
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-continuous Collector power dissipation Junction temperature Storage temperature range
O
Symbol
V CBO V CEO V EBO IC PC TJ T STG
Value
-40 -40 -5 -0.6 300 150 -55 to +150
Unit
V V V A mW
O
C C
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Parameter
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency
Symbol
V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CEO I EBO h FE V CE(SAT) V BE(SAT) fT
Conditions
I C =-100μA, I E =0 I C =-1mA, I B =0 I E =-100μA, I C =0 V CB =-35V, I E =0 V CE =-35V, I B =0 V EB =-4V, I C =0 V CE =-2V, I C =-150mA I C =-150mA, I B =-15mA I C =-150mA, I B =-15mA V CE =-10V, I C =-20mA f=100MHz
Min
-40 -40 -5
Typ.
Max
Unit
V V V
-0.1 -0.1 -0.1 100……
