器件名称:
MUN5135DW1T1
功能描述:
Dual Bias Resistor Transistors
文件大小:
280.51KB 共11页
简 介:
LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. . Simplifies Circuit Design . Reduces Board Space . Reduces Component Count . Available in 8 mm, 7 inch/3000 Unit Tape and Reel MUN5111DW1T1 Series 6 5 4 1 2 3 SOT-363 CASE 419B STYLE1 6 5 4 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO –50 Vdc Collector-Emitter Voltage V CEO –50 Vdc Collector Current IC –100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1.) mW 256 (Note 2.) T A = 25°C 1.5 (Note 1.) mW/°C Derate above 25°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junct……
