器件名称:
TIP33C_08
功能描述:
Complementary power transistors
文件大小:
114.69KB 共7页
简 介:
TIP33C TIP34C Complementary power transistors Features ■ ■ . Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications ■ General purpose 3 2 1 Description The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. TO-247 Figure 1. Internal schematic diagrams Table 1. Device summary Marking TIP33C TO-247 TIP34C TIP34C Tube Package Packaging Order code TIP33C February 2008 Rev 3 1/7 www.st.com 7 Electrical ratings TIP34C 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter NPN PNP Value TIP33C TIP34C 140 140 100 5 10 15 3 80 -65 to 150 150 V V V V A A A W °C °C Unit VCBO VCES VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Total dissipation at Tcase = 25 °C Storage temperature Max. operating junction temperature For PNP type voltage and current values are negative. Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Value 1.56 Unit °C/W 2/7 TIP34C Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Symbol ICES ICEO IEBO Electrical characteristics Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Tes……
