器件名称:
D1040UK
功能描述:
METAL GATE RF SILICON FET
文件大小:
166.74KB 共5页
简 介:
TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN E (4 pls) F I N M O J K DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.61R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.064R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 PIN 2 PIN 4 DRAIN 1 GATE 2 SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 16 dB MINIMUM APPLICATIONS VHF FM COMMUNICATIONS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Stor……
