器件名称:
1A3
功能描述:
SILICON RECTIFIER DIODES
文件大小:
44.84KB 共2页
简 介:
1A1 ~ 1A7 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES R-1 0.099 (2.51) 0.095 (2.42) 1.00 (25.4) MIN. 0.138 (3.5) 0.114 (2.9) MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram 0.024 (0.6) 0.020 (0.5) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 A. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (1) Typical Thermal Resistance (2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC SYMBOL 1A1 50 35 50 1A2 100 70 100 1A3 200 140 200 1A4 400 280 400 1.0 30 1.1 5.0 50 15 50 1A5 600 420 600 1A6 800 560 800 1A7 1000 700……