器件名称:
1N5819WB
功能描述:
SCHOTTKY BARRIER DIODES
文件大小:
47.54KB 共1页
简 介:
Certificate TH97/10561QM Certificate TW00/17276EM 1N5817WB - 1N5819WB PRV : 20 - 40 Volts IO : 1.0 Ampere MECHANICAL DATA : * Case : SOD-123 * Weight : 0.01 gram (approximately) * 1N5817WB Marking Code : A0 * 1N5818WB Marking Code : ME * 1N5819WB Marking Code : SR SCHOTTKY BARRIER DIODES SOD-123 0.6 0.5 0.135 0.127 3.9 3.7 2.7 2.6 Absolute Maximum Rating Parameter DC Reverse Voltage (Ta = 25 °C) Symbol 1N5817WB 1N5818WB 1N5819WB VR IO Ptot TJ TSTG 1.15 1.05 1.65 1.55 Dimensions in millimeters Value 20 30 40 1.0 450 -55 to + 150 -55 to + 150 Unit V A mW °C °C Average Rectified Output Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Electrical Characteristics Parameter Reverse Breakdown Voltage at I R = 1 mA Reverse Leakage Current (Ta = 25 °C ) Symbol 1N5817WB 1N5818WB 1N5819WB at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V 1N5817WB 1N5818WB 1N5819WB 1N5819WB 1N5819WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB at I F = 3.0 A 1N5817WB 1N5818WB 1N5819WB VF IR VBR Min 20 30 40 - Typ - Max 1 1 1 0.050 0.075 0.45 0.45 0.55 0.60 0.750 0.875 0.900 120 Unit V mA Forward Voltage at I F = 0.1 A at I F = 1.0 A V Diode Capacitance at VR = 4 V, f = 1MHz Page 1 of 1 CD - pF Rev. 01 : August 22, 2006 ……
