器件名称:
START499D
功能描述:
NPN RF silicon transistor
文件大小:
238.53KB 共18页
简 介:
START499D NPN RF silicon transistor Features ■ ■ ■ ■ ■ ■ ■ High efficiency Common emitter configuration Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz Plastic package Linear and non linear operation Supplied in tape and reel In compliance with the 2002/95/EC european directive Figure 1. Pin connection SOT-89 Description The START499D provide the market with a Si state-of-art RF process. Manufactured with ST 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT-89 for given breakdown voltage (BVCEo). START499D is suitable for a wide range of application up to 1 GHz. Emitter Base Emitter Collector Table 1. Device summary Marking D499 Package SOT-89 Packaging Tape and reel Order code START499D June 2010 Doc ID 14496 Rev 4 1/18 www.st.com 18 Contents START499D Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ……
