器件名称:
MMBTH10_07
功能描述:
NPN 1.1 GHz RF Transistor
文件大小:
176.74KB 共6页
简 介:
MMBTH10 NPN 1.1 GHz RF Transistor P b Lead(Pb)-Free BASE COLLECTOR 3 1 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the 100mA~20mA Range in Common emitter or Common base mode of operations. SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC PD Value 25 30 3 50 225 1.8 Unit V V V mA Total Power Dissipation FR-5 Board (1) TA =25°C Derate above =25°C Thermal Resistance , Junction Ambient Junction Temperature Storage Temperature 1. Tj = 25°C unless otherwise specied. mW mW/°C °C/W °C °C RθJA TJ Tstg 556 +150 -55~150 Device Marking MMBTH10=3EM , HT10 WEITRON http://www.weitron.com.tw 1/6 09-Feb-07 MMBTH10 ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted ) (Countinued) Characteristics Collector-Emitter Voltage (IC =10mA , IB = 0 ) Collector-Base Voltage (IC =10A , IE = 0) Emitter-Base Voltage (IE =10A , IC =0) Collector cut-o current ( IE = 0 , VCB = 25V ) Emitter cut-o current ( IC = 0 , VEB = 2.0V ) DC current gain (IC=4mA , VCE = 10V ) Collector-Emitter Saturation (IC=4mA ,IB = 0.4mA ) Base-Emitter On Voltage (IC=4mA , VCE = 10V ) Transition frequency (IC =4mA , VCE = 10V , f =100MHz ) Collector-Base Capacitance(VCB=10V ,IE = 0 , f =1.0MHz ) Common-Base Feedback Capacitance (VCB= 10……
