器件名称:
CAS100H12AM1
功能描述:
1200V, 100A Silicon Carbide Half-Bridge Module
文件大小:
644.71KB 共7页
简 介:
CAS100H12AM1 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features VDS1200 V ID (TC= 100C) 100 A RDS(on) Package 16 m Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Positive Temperature Coefficient on VF and VDS(on) System Benefits Enables compact and lightweight systems High efficiency operation Mitigate over-voltage protection Ease of transistor gate control Reduces thermal requirements Applications High Power Converters Motor Drives Solar Inverters UPS and SMPS Induction Heating Part Number CAS100H12AM1 Package Half-Bridge Module Marking CAS100H12AM1 Maximum Ratings (TC = 25C unless otherwise specified) Symbol VDS VGS ID ID(pulse) Parameter Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Pulsed Drain Current Junction Temperature Case and Storage Temperature Range Case Isolation Voltage Stray Inductance Mounting Torque Weight Clearance Distance Creepage Distance Value 1200 -5/+20 165 105 400 150 -55 to +125 6000 <15 2.94 200 12.2 17.3 20.2 Unit V V A A C C V nH Nm g mm mm mm Terminal to terminal Terminal to terminal Terminal to base plate AC, t=1min Measured along maximum path from pad to Lug VGS = 20V, TC=25C VGS = 20V, TC=100C Pulse width tP = 1ms Limited by Tjmax,TC = 25C Test Conditions Notes M1, Rev. - TJ TC ,TSTG Visol LStray M G S100H12A Datasheet: CA Subject to change ……
