器件名称:
FDD1600N10ALZD
功能描述:
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
文件大小:
1080.59KB 共12页
简 介:
FDD1600N10ALZD BoostPak (N-Channel PowerTrench MOSFET + Diode) May 2013 FDD1600N10ALZD BoostPak (N-Channel PowerTrench MOSFET + Diode) 100 V, 6.8 A, 160 m Features RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A RDS(on) = 175 m ( Typ.)@ VGS = 5.0 V, ID = 2.1 A Low Gate Charge ( Typ.2.78 nC) Low Crss ( Typ. 2.04 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. Applications LED Monitor Backlight LED TV Backlight LED Lighting Consumer Appliances, DC-DC converter (Step up & Step down) 3 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 3 4,5 1 1 2 4 5 TO252-5L 2 Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt IF IFM PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Diode Continuous Forward Current (TC = 124oC) Diode Maximum Forward Current Power Dissipation (TC = 25oC) - Derate above 25oC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) FDD1600N10ALZD 100 ±20 6.8 4.3 13.6 5.08 6.0 4 40 14.9 0.12 -55 to +150 300 Unit V V A A mJ V/ns A A ……
