器件名称:
FDD850N10LD
功能描述:
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
文件大小:
827.97KB 共11页
简 介:
FDD850N10LD BoostPak (N-Channel PowerTrench MOSFET + Diode) May 2013 FDD850N10LD BoostPak (N-Channel PowerTrench MOSFET + Diode) 100 V, 15.7 A, 75 m Features RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A RDS(on) = 64 m ( Typ.)@ VGS = 5.0 V, ID = 12 A Low Gate Charge ( Typ.22.2 nC) Low Crss ( Typ. 42 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability LED Monitor Backlight RoHS Compliant LED TV Backlight LED Lighting Consumer Appliances, DC-DC converter (Step up & Step down) 3 3 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 4,5 1 Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. Applications 1 2 4 5 TO252-5L 2 Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD IF(AV) IFSM TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) FDD850N10LD 100 ±20 15.3 9.7 46 41 6.0 42 0.33 5 50 -55 to +150 300 Unit V V A A mJ V/ns W W/oC A A o Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Diode Average Rectified Forward Current (TC = 138oC) Diode Non-repetitive Peak Sur……
