器件名称:
2MBI300VD-120-50
功能描述:
富士IGBT,300A/1200V
文件大小:
349.48KB 共6页
简 介:
http://www.fujielectric.com/products/semiconductor/ 2MBI300VD-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package High speed switching Voltage drive Low Inductance module structure Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Symbols VCES VGES Ic Collector current IGBT Modules Features Applications Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Inverter Conditions Tc=80°C Tc=25°C Continuous 1ms 1ms 1 device Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) AC : 1min. Maximum ratings 1200 ±20 300 360 600 300 600 2205 175 150 125 -40 ~ +125 2500 6.0 5.0 Units V V W °C VAC Nm Note *1:All terminals should be connected together during the test. Note *2:Recommendable Value : 3.0-6.0 Nm (M5 or M6) Note *3:Recommendable Value : 2.5-5.0 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr Symbols Rth(j-c) Rth(c-f) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emi……