EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询:
400万器件资料库等您来搜!
首页>FUJI> 2MBI300VH-120-50

2MBI300VH-120-50

器件名称: 2MBI300VH-120-50
功能描述: 富士IGBT,2-pack,300A/1200V
文件大小: 370.08KB 共6页
生产厂商: FUJI
下  载: 在线浏览点击下载
简  介: http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package High speed switching Voltage drive Low Inductance module structure Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Symbols VCES VGES Ic Collector current IGBT Modules Features Applications Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Inverter Conditions Tc=100°C Tc=25°C Continuous 1ms 1ms 1 device Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) AC : 1min. Maximum ratings 1200 ±20 300 360 600 300 600 1600 175 150 125 -40 ~ +125 2500 6.0 5.0 Units V V A W °C VAC Nm Note *1:All terminals should be connected together during the test. Note *2:Recommendable Value : 3.0-6.0 Nm (M5 or M6) Note *3:Recommendable Value : 2.5-5.0 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr Symbols Rth(j-c) Rth(c-f) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-E……
相关电子器件
器件名 功能描述 生产厂商
2MBI300VH-120-50 富士IGBT,2-pack,300A/1200V FUJI
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2