器件名称: 2MBI100VA-120-50
功能描述: 富士IGBT,2-PACK，1200V/100A
文件大小: 388.46KB 共6页
简 介:http://www.fujielectric.com/products/semiconductor/
2MBI100VA-120-50
IGBT MODULE (V series) 1200V / 100A / 2 in one package
High speed switching Voltage drive Low Inductance module structure Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
IGBT Modules
Features
Applications
Maximum Ratings and Characteristics
Symbols VCES VGES IC IC pulse Collector current -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) -
Items Collector-Emitter voltage Gate-Emitter voltage
Conditions TC =100°C
Continuous 1ms 1ms 1 device
AC : 1min.
Maximum ratings 1200 ±20 100 200 100 200 555 175 150 125 -40 ~ 125 2500 5.0 5.0
Units V V A W °C VAC Nm
Note *1:All terminals should be connected together when isolation test will be done. Note *2:Recommendable Value : 3.0-5.0 Nm (M5 or M6) Note *3:Recommendable Value : 2.5-3.5 Nm (M5)
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Symbols
ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) RG (int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr Symbols Rth(j-c) Rth(c-f)
Items Zero gate voltage collector current Gate-Emitter leakage curren……
