器件名称:
2SA1979
功能描述:
PNP Silicon Transistor (Medium power amplifier)
文件大小:
239.94KB 共4页
简 介:
Semiconductor 2SA1979 PNP Silicon Transistor Description Medium power amplifier Features Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342 Ordering Information Type NO. 2SA1979 Marking A1979 Package Code TO-92 Outline Dimensions 3.35~3.55 4.4~4.6 2.15~2.35 unit : mm 4.4~4.6 0.38~0.42 1.96~2.16 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Collector 3. Base 1.1~1.3 0.38 KST-9001-002 1 2SA1979 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -40 -32 -5 -500 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob Test Condition IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz Min. Typ. Max. -40 -32 -5 70 200 7.5 -0.1 -0.1 240 -0.25 - Unit V V V A A V MHz pF * : hFE rank / O : 70~140, Y : 120~240 KST-9……
