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2SA2080MDTL-E

器件名称: 2SA2080MDTL-E
功能描述: Silicon PNP Epitaxial
文件大小: 172.05KB 共6页
生产厂商: RENESAS
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简  介: 2SA2080 Silicon PNP Epitaxial REJ03G0643-0100 (Previous ADE-208-1476) Rev.1.00 Aug.10.2005 Features Low frequency amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 *CMPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Ratings –30 –30 –5 –100 100 150 150 –55 to +125 Unit V V V mA mA mW °C °C Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Emitter current IE Collector power dissipation PC* Junction temperature Tj Storage temperature Tstg *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Rev.1.00 Aug 10, 2005 page 1 of 5 2SA2080 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Notes: 1. The 2SA2080 is grouped by hFE as follows. Grade C D Mark MC MD hFE 160 to 320 250 to 500 Min –30 –30 –5 160 Typ Max –0.5 –0.5 500 –0.2 –0.75 Unit V V V A A V V Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –20 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA Rev.1.00 Aug 10, 2005 page 2 of 5 2SA2080 M……
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2SA2080MDTL-E Silicon PNP Epitaxial RENESAS
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