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首页>RENESAS> 2SC3380ASTR-E

2SC3380ASTR-E

器件名称: 2SC3380ASTR-E
功能描述: Silicon NPN Triple Diffused
文件大小: 62.73KB 共6页
生产厂商: RENESAS
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简  介: 2SC3380 Silicon NPN Triple Diffused REJ03G0713-0300 (Previous ADE-208-1082A) Rev.3.00 Aug.10.2005 Application High frequency high voltage amplifier High voltage switch Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 Note: Marking is “AS”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC 1 PC* Tj Tstg Ratings 300 300 5 100 1 150 –55 to +150 Unit V V V mA W °C °C 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Rev.3.00 Aug 10, 2005 page 1 of 5 2SC3380 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO VCE(sat) hFE fT Cob Min 300 300 5 — — 30 — — Typ — — — — — — 80 — Max — — — 1 1.5 200 — 4 Unit V V V A V MHz pF Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCE = 250 V, RBE = ∞ IC = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Rev.3.00 Aug 10, 2005 page 2 of 5 2SC3380 Main Characteristic……
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2SC3380ASTR-E Silicon NPN Triple Diffused RENESAS
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