器件名称:
2SA836CTZ
功能描述:
Silicon PNP Epitaxial
文件大小:
169.55KB 共6页
简 介:
2SA836 Silicon PNP Epitaxial REJ03G0629-0200 (Previous ADE-208-316) Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 200 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SA836 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min –55 –55 –5 — — 160 — — — — — — Typ — — — — — — –0.1 –0.66 200 2.0 1 0.5 Max — — — –100 –50 500 –0.5 –0.75 — — 5 1 Unit V V V nA nA V V MHz pF dB dB Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCE = –12 V, IE = –2 mA VCB = –10 V, IE = 0, f = 1MHz VCE = –6 V, f = 10 Hz IC = –0.1mA, Rg = 10 k f = 1 k……
