器件名称:
2SC3512
功能描述:
Silicon NPN Epitaxial
文件大小:
163.96KB 共6页
简 介:
2SC3512 Silicon NPN Epitaxial REJ03G0714-0300 Rev.3.00 Apr 20, 2006 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 600 150 –55 to +150 Unit V V V mA mW °C °C Rev.3.00 Apr 20, 2006 page 1 of 5 2SC3512 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to cutoff current Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICEO IEBO ICBO hFE Cob fT PG NF Min 15 — — — 50 — — — — Typ — — — — 120 1.2 6.0 10.5 1.6 Max — 1 1 1 250 1.6 — — — Unit V A A A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCE = 10 V, RBE = ∞ VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Rev.3.00 Apr 20, 2006 page 2 of 5 2SC3512 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 1,000 20 Typical Output Characteristics 180 160 140 120 Collector Current IC (mA) 800 16 600 400 12 100 80 8 60 40 200 4 IB = 2……
