器件名称:
2SA844DTZ
功能描述:
Silicon PNP Epitaxial
文件大小:
161.55KB 共5页
简 介:
2SA844 Silicon PNP Epitaxial REJ03G0630-0200 (Previous ADE-208-320) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA844 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SA844 is grouped by hFE as follows. C D 160 to 320 250 to 500 Min –55 –55 –5 — — 160 — — — — Typ — — — — — — –0.1 –0.66 200 2.0 Max — — — –100 –50 500 –0.5 –0.75 — — Unit V V V nA nA V V MHz pF Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCE = –12 V, IE = –2 mA VCB = –10 V, IE = 0, f = 1 MHz Rev.2.00 Aug 10, 200……
