器件名称:
2SA872ADTZ
功能描述:
Silicon PNP Epitaxial
文件大小:
173.04KB 共6页
简 介:
2SA872A Silicon PNP Epitaxial REJ03G0631-0200 (Previous ADE-208-1001) Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Complementary pair with 2SC1775A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –120 –120 –5 –50 300 150 –50 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SA872A Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CEO ICBO hFE1*1 hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure VBE VCE(sat) fT Cob NF Min –120 — — 250 160 — — — — — Typ — — — — — — — 120 1.8 — Max — — –0.5 800 — –0.75 –0.5 — — 5.0 V V MHz pF dB Unit V A A Test conditions IC = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCE = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –0.1 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz IC = –50 A Rg = 50 k f = 1 kHz — Note: 1. The 2SA872A is grouped by hFE1 as follows. D E 250 to 500 400 to 800 — 1.5 dB Rev.2.00 Aug 10, 2005 page 2 of 5 2SA87……
