器件名称:
2SC3519
功能描述:
Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
文件大小:
24.51KB 共1页
简 介:
LAPT 2SC3519/3519A Application : Audio and General Purpose (Ta=25°C) 2SC3519 2SC3519A Unit Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) sAbsolute maximum ratings (Ta=25°C) Symbol 2SC3519 2SC3519A VCBO VCEO VEBO IC IB PC Tj Tstg 160 160 5 15 4 130(Tc=25°C) 150 –55 to +150 180 180 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz sElectrical Characteristics Symbol ICBO VCB= 160 160min Conditions External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 100max 180 100max 180min 50min 50typ 250typ A V 19.9±0.3 4.0 A V V MHz pF a b 3.2±0.1 20.0min 4.0max 2.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 B C E 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (s) 0.2typ tstg (s) 1.3typ tf (s) 0.45typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m 0 60 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V C E =4V) 15 A 70 500 mA 400 mA 300 mA Collector Current I C (A) 10 2 Collector Current I C (A) 200m A 10 10 0m A p) em eT as 50mA (C 12 C 0 0 1 2 3 4 0 0 0.2 0.4 0.6 0.8 1.0 0 0 –30 25 1 Base-Emittor Voltage V B E ……
