器件名称:
2SC3680
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
文件大小:
25.46KB 共1页
简 介:
2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3680 900 800 7 7(Pulse14) 3.5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–2A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 2SC3680 Unit A A 19.9±0.3 4.0 V V MHz pF a b 3.2±0.1 20.0min 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.45 IB2 (A) –1.5 ton (s) 1max tstg (s) 5max tf (s) 1max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 7 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E ( s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) 1A 700m A 6 500mA 1 –55C (Cas 25C (C V B E (sat) e Temp) p) 6 Collector Current I C (A) Collector Current I C (A) mp) 4 300 mA ase Tem 4 Temp (Case ) emp (C 12 5 V C E (sat) 0 0.02 0.……
