器件名称:
2SC3831
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
文件大小:
25.54KB 共1页
简 介:
2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.5max 1 . 3 max 8typ 105typ (Ta=25°C) 2SC3831 Unit External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 mA A 4.0 V V MHz pF 19.9±0.3 a b 3.2±0.1 20.0min 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 40 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –1.0 ton (s) 1max tstg (s) 4.5max tf (s) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 A .2 1A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) =1 800 mA V B E (sat) 1 –55C (Cas 25C (C Collector Current I C (A) e Temp) p) ) ) mp 6 400 mA ase Tem Collector Current I C (A) 8 IB 60 0m A 8 6 p) Tem Te (Ca se……
